drd 4460v 22 rectifier diode ds 6003 C 1 march 2011 (ln28190 ) 1 / 6 www.dynexsemi.com features ? double side cooling ? high surge capability voltage ratings part and ordering number repetitive peak voltages v rrm v conditions drd 4460v 22 drd 4460v 20 drd 4460v 18 drd 4460v 16 2200 2000 1800 1600 v rsm = v rrm +100v ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: d rd 4460v 22 for a 2200v device key parameters v rrm 2200 v i f(av) 4460 a i fsm 564 00 a outline type code: v (see package details for further information) fig. 1 package outline
drd 4460v 22 2 / 6 www.dynexsemi.com current ratings t case = 75c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 5430 a i f(rms) rms value - 8530 a i f continuous (direct) on - state current - 7680 a t case = 100c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 4460 a i f(rms) rms value - 7000 a i f continuous (direct) on - state current - 6310 a surge ratings symbol parameter test conditions max. units i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 175 c 56.4 ka i 2 t i 2 t for fusing v r = 0 15.91 ma 2 s
- 3 - d rd 4460v 22 3 / 6 www.dynexsemi.com thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0. 0 1 c/w r th(c - h) thermal resistance C case to heatsink double side cooled dc - 0.00 3 c/w t vj virtual junction temperature blocking v drm / vrrm - 40 175 c t stg storage temperature range - 40 175 c f m clamping force 50 62 kn characteristics symbol parameter test conditions min. max. units v fm forward voltage at 30 00 a peak, t case = 25 c - 1. 15 v i rm peak reverse current at v drm, t case = 175 c - 2 50 ma q s total stored charge i f = 4 000a, di rr /dt = 10 a/s - 5 000 c t case = 175 c, v r =100v v to threshold voltage at t vj = 175 c - 0.81 v r t slope resistance at t vj = 175 c - 0.059 m ?
drd 4460v 22 4 / 6 www.dynexsemi.com curves fig.2 maximum forward characteristics fig.3 dissipation curves fig. 4 surge (non - repetitive) forward current vs time fig. 5 maximum (limit) transient thermal impedance - junction to case 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0.6 0.8 1 1.2 1.4 1.6 instantaneous forward current, i f - (a) instantaneous forward voltage,v f - (v) t j =175 c 0 1000 2000 3000 4000 5000 6000 7000 8000 0 1000 2000 3000 4000 5000 mean power dissipation - (w) mean on - state current, i t(av) - (a) 1/2 wave 3 phase 6 phase 4.0 14.0 24.0 34.0 44.0 54.0 64.0 1 10 100 surge current, itsm - (ka) number of cycles conditons: t case =175 c v r =0 pulse width = 10ms 0 0.005 0.01 0.015 0.001 0.01 0.1 1 10 100 thermal impedance zth(j - c) ( c/w ) time ( s ) double side cooled
- 5 - d rd 4460v 22 5 / 6 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. package outline type code: v note: some packages may be supplied with gate and or tags.
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